HMC573LC3B Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 22 GHz OUTPUT

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HMC573LC3B
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 22 GHz OUTPUT
Typical Applications
The HMC573LC3B is suitable for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
Functional Diagram
Features
High Output Power: +12 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout= 16 GHz
100 KHz SSB Phase Noise: -134 dBc/Hz
Single Supply: +5V@ 92 mA
RoHS Compliant 3x3 mm SMT Package
General Description
The HMC573LC3B is a x2 active broadband frequ-
ency multiplier utilizing GaAs PHEMT technology in a
leadless RoHS compliant SMT package. When driven
by a +5 dBm signal, the multiplier provides +12 dBm
typical output power from 8 to 22 GHz. The Fo and
3Fo isolations are >20 dBc and >25 dBc respectively
at 16 GHz. The HMC573LC3B is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -134 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. The RoHS packaged HMC573LC3B
eliminates the need for wire bonding, and allows the
use of surface mount manufacturing techniques.
Electrical Specifications, T_A = +25°C, Vdd = +5V, 5 dBm Drive Level
Parameter
Min.
Typ.
Frequency Range, Input
4 - 11
Frequency Range, Output
8 - 22
Output Power
9
12
Fo Isolation (with respect to output level)
20
3Fo Isolation (with respect to output level)
25
4Fo Isolation (with respect to output level)
15
Input Return Loss
10
Output Return Loss
10
SSB Phase Noise (100 kHz Offset)
-134
Supply Current (Idd) (Vdd = 5V, Vgg = -1.25V Typ.)
92
*Adjust Vgg between -1.5 and ~1.1V to achieve Idd = 92 mA
Max.
Units
GHz
GHz
dBm
dBc
dBc
dBc
dB
dB
dBc/Hz
mA
1
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