HMC326MS8G Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz

HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver amplifiers which
operate between 3.0 and 4.5 GHz. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplifier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icc)
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Min.
18
21
32
Vpd = 0V
Vpd = 5V
110
tOn/tOff
Typ.
3.0 - 4.5
21
0.025
12
7
23.5
26
36
5
1
130
7
10
Max.
0.035
160
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
uA
mA
mA
ns
1
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