HMC311SC70 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz

HMC311SC70 / 311SC70E
v04.0814
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Typical Applications
The HMC311SC70(E) is ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio & Test Equipment
Functional Diagram
Features
P1dB Output Power: +15 dBm
Output IP3: +30 dBm
Gain: 15 dB
Cascadable, 50 Ohm I/O’s
Single Supply: +5V
Industry Standard SC70 Package
General Description
The HMC311SC70(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 8 GHz amplifier. Packaged in an industry
standard SC70, the amplifier can be used as either
a cascadable 50 Ohm gain stage or to drive the LO
port of HMC mixers with up to +15 dBm output power.
The HMC311SC70(E) offers 15 dB of gain and an
output IP3 of +30 dBm while requiring only 54 mA
from a +5V supply. The Darlington topology results in
reduced sensitivity to normal process variations, and
yields excellent gain stability over temperature while
requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, T_A = +25° C
Gain
Parameter
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
Min.
DC - 1.0 GHz
14.0
1.0 - 4.0 GHz
13.0
4.0 - 6.0 GHz
12.5
6.0 - 8.0 GHz
11.0
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 8.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
13.5
2.0 - 4.0 GHz
12.0
4.0 - 6.0 GHz
10.0
6.0 - 8.0 GHz
8.0
DC - 2.0 GHz
2.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 8.0 GHz
Typ.
15.0
15.0
14.5
13.0
0.004
0.007
0.012
0.018
15
18
15.5
15.0
13.0
11.0
30
27
24
5
55
Max.
0.007
0.012
0.016
0.022
74
Units
dB
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
1
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