HMC1114 Datasheet, PDF (1/16 Pages) Analog Devices – High output IP3: 44 dBm typical

Data Sheet
FEATURES
High saturated output power (PSAT): 41.5 dBm typical
High small signal gain: 35 dB typical
High power gain for saturated output power: 25.5 dB typical
Bandwidth: 2.7 GHz to 3.8 GHz
High power added efficiency (PAE): 54% typical
High output IP3: 44 dBm typical
Supply voltage: VDD = 28 V at 150 mA
32-lead, 5 mm × 5 mm LFCSP_CAV package
APPLICATIONS
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructure
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
GENERAL DESCRIPTION
The HMC1114 is a gallium nitride (GaN), broadband power
amplifier, delivering 10 W with more than 50% power added
efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The
HMC1114 provides ±0.5 dB gain flatness.
10 W, GaN Power Amplifier,
2.7 GHz to 3.8 GHz
HMC1114
FUNCTIONAL BLOCK DIAGRAM
HMC1114
GND 1
GND 2
GND 3
RFIN 4
RFIN 5
GND 6
GND 7
GND 8
24 GND
23 GND
22 GND
21 RFOUT
20 RFOUT
19 GND
18 GND
17 GND
PACKAGE
BASE
Figure 1.
The HMC1114 is ideal for pulsed or continuous wave (CW)
applications such as wireless infrastructure, radar, public mobile
radio, and general-purpose amplification.
The HMC1114 is housed in a compact LFCSP_CAV package.
Rev. 0
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