HMC1040LP3CE Datasheet, PDF (1/6 Pages) Analog Devices – Industrial Sensors

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Typical Applications
This HMC1040LP3BE is ideal for:
• Point-to-Point Radios
• Test Instrumentation
• SatCom Transponders & VSAT
• Industrial Sensors
• EW & ECM Subsystems
Functional Diagram
HMC1040LP3CE
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Features
Low Noise Figure: 2.2 dB
High Gain: 23 dB
P1dB Output Power: +12 dBm
Single Supply: +2.5V @ 70 mA
Output IP3: +22 dBm
50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 16mm²
General Description
The HMC1040LP3CE is a self-biased GaAs MMIC
Low Noise Amplifier housed in a leadless 3x3 mm
plastic surface mount package. The amplifier operates
between 24 and 43.5 GHz, delivering 23 dB of small
signal gain, 2.2 dB noise figure, and output IP3 of +22
dBm, while requiring only 70 mA from a +2.5 V supply.
The P1dB output power of +12 dBm enables the LNA to
function as a LO driver for many of Hittite’s balanced, I/Q
and image reject mixers. The HMC1040LP3CE fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, and is ideal for high capacity
microwave radios and VSAT applications.
Electrical Specifications, T_A = +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA
Parameter
Min.
Typ. Max. Min. Typ. Max.
Min.
Typ.
Max.
Frequency Range
24 - 27.5
27.5 - 33.5
33.5 - 43.5
Gain ^[1]
22
25
20
23
17
20
Gain Variation over Temperature
0.022
0.021
0.021
Noise Figure ^[1]
2.7
3.2
2.2
2.7
2.7
3.2
Input Return Loss
11
12
10
Output Return Loss
16
13
10
Output Power for 1 dB Compression
12
12
12
Saturated Output Power (Psat)
14
14
14
Output Third Order Intercept (IP3)
22
22
24
Supply Current (Idd)
(Vdd = 2.5V)
70
85
70
85
70
85
[1] Board loss subtracted out.
Units
GHz
dB
dB /°C
dB
dB
dB
dBm
dBm
dBm
mA
1
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