ADG779 Datasheet, PDF (1/8 Pages) Analog Devices – CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package

a CMOS 1.8 V to 5.5 V, 2.5 ⍀
SPDT Switch/2:1 Mux In Tiny SC70 Package
ADG779
FEATURES
1.8 V to 5.5 V Single Supply
2.5 ⍀ On Resistance
0.75 ⍀ On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
t_ON 20 ns
t_OFF 6 ns
Typical Power Consumption (<0.01 ␮W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
ADG779
S2
D
S1
IN
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submi-
cron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.
The ADG779 operates from a single supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
3. Very Low R_ON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, R_ON is typically 40 Ω over the temperature range.
4. On-Resistance Flatness (R_FLAT(ON)) (0.75 Ω typ).
5. –3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. 14 ns Switching Times.
REV. 0
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© Analog Devices, Inc., 2001