ADG719 Datasheet, PDF (1/8 Pages) Analog Devices – CMOS Low Voltage 4 ohm SPDT Switch

a
CMOS
Low Voltage 4 ⍀ SPDT Switch
ADG719
FEATURES
+1.8 V to +5.5 V Single Supply
4 ⍀ (Max) On Resistance
0.75 ⍀ (Typ) On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead ␮SOIC Package
Fast Switching Times
t_ON 20 ns
t_OFF 6 ns
Typical Power Consumption (<0.01 ␮W)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.
The ADG719 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices.
Each switch of the ADG719 conducts equally well in both di-
rections when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead µSOIC package.
FUNCTIONAL BLOCK DIAGRAM
ADG719
S2
D
S1
IN
SWITCHES SHOWN FOR A LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation. The ADG719
offers high performance, including low on resistance and fast
switching times and is fully specified and guaranteed with
+3 V and +5 V supply rails.
2. Very Low R_ON (4 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, R_ON is typically 40 Ω over the temperature range.
3. On-Resistance Flatness (R_FLAT(ON)) (0.75 Ω typ).
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t_ON/t_OFF.
7. Tiny 6-lead SOT-23 and 8-lead µSOIC packages.
REV. A
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© Analog Devices, Inc., 1998