ADG636_15 Datasheet, PDF (1/16 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage

1 pC Charge Injection, 100 pA Leakage,
CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
ADG636
FEATURES
1 pC charge injection
±2.7 V to ±5.5 V dual supply
+2.7 V to +5.5 V single supply
Automotive temperature range: −40°C to +125°C
100 pA (maximum at 25°C) leakage currents
85 Ω typical on resistance
Rail-to-rail operation
Fast switching times
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avionics
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two indepen-
dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within 2 Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
FUNCTIONAL BLOCK DIAGRAM
S1A 4
S1B 5
ADG636
6 D1
S2A 11
S2B 10
9 D2
LOGIC
1
14
2
A0 A1 EN
Figure 1.
PRODUCT HIGHLIGHTS
1. Ultralow charge injection. QINJ: ±1.5 pC typical over the
full signal range.
2. Leakage current <0.25 nA maximum at 85°C.
3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.
4. Automotive temperature range: −40°C to +125°C.
5. Small 14-lead TSSOP package.
Rev. B
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