ADG636 Datasheet, PDF (1/12 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

a 1 pC Charge Injection, 100 pA Leakage
CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch
ADG636
FEATURES
1 pC Charge Injection
؎2.7 V to ؎5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40؇C to +125؇C
100 pA (Max @ 25؇C) Leakage Currents
85 ⍀ Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 ␮W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
FUNCTIONAL BLOCK DIAGRAM
S1A 4
S1B 5
S2A 11
S2B 10
ADG636
6 D1
9 D2
LOGIC
1
14
2
A0 A1 EN
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two independently
selectable CMOS SPDT (Single Pole, Double Throw) switches.
When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ± 2.7 V to ± 5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ± 1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
It offers on-resistance of 85 Ω typ, which is matched to within
2 Ω between channels. The ADG636 also has low power dissi-
pation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1. Ultralow Charge Injection (Q_INJ: ± 1.5 pC typ over full
signal range)
2. Leakage Current <0.25 nA max @ 85°C
3. Dual ± 2.7 V to ± 5 V or Single +2.7 V to +5.5 V Supply
4. Automotive Temperature Range: –40°C to +125°C
5. Small 14-Lead TSSOP Package
REV. 0
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