ADG1219 Datasheet, PDF (1/17 Pages) Analog Devices – Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS™ SPDT in SOT-23

Preliminary Technical Data
Low Capacitance, Low Charge Injection,
±15 V/12 V iCMOS™ SPDT in SOT-23
ADG1219
FEATURES
<0.5 pC charge injection over full signal range
2.5 pF off capacitance
Low leakage; 0.6 nA maximum @ 85°C
120 Ω on resistance
Fully specified at +12 V, ±15 V
No VL supply required
3 V logic-compatible inputs
Rail-to-rail operation
8-lead SOT-23 package
FUNCTIONAL BLOCK DIAGRAM
ADG1219
SA
SB
D
DECODER
IN EN
SWITCHES SHOWN FOR A LOGIC “0” INPUT
Figure 1.
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio/video signal routing
Communication systems
GENERAL DESCRIPTION
The ADG1219 is a monolithic iCMOS device containing an
SPDT switch. An EN input is used to enable or disable the
device. When disabled, all channels are switched off. When on,
each channel conducts equally well in both directions and has
an input signal range that extends to the supplies. Each switch
exhibits break-before-make switching action.
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metal-
oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor-
mance, dramatically lower power consumption, and reduced
package size.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data
acquisition and sample-and-hold applications, where low glitch
and fast settling are required. Figure 2 shows that there is
minimum charge injection over the entire signal range of the
device. iCMOS construction also ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.
0.5
T_A = 25ºC
0.4
0.3
V_DD = +15V
V_SS = –15V
0.2
0.1
0
–0.1
–0.2
V_DD = 12V
V_SS = 0V
–0.3
–0.4
V_DD = +5V
V_SS = –5V
–0.5
–15
–10
–5
0
5
10
15
INPUT VOLTAGE (V)
Figure 2. Charge Injection vs. Input Voltage
Rev. PrB
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