ADG1209YRZ Datasheet, PDF (1/20 Pages) Analog Devices – Low Capacitance, 4-/8-Channel, ±15 V/+12 V iCMOS Multiplexers

FEATURES
<1 pC charge injection over full signal range
1 pF off capacitance
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
Available in 16-lead TSSOP, 4 mm × 4 mm LFCSP_VQ, and
16-lead SOIC
Typical power consumption < 0.03 μW
APPLICATIONS
Audio and video routing
Automatic test equipment
Data-acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
Low Capacitance, 4-/8-Channel,
±15 V/+12 V iCMOS Multiplexers
ADG1208/ADG1209
FUNCTIONAL BLOCK DIAGRAMS
ADG1208
S1
ADG1209
S1A
DA
S4A
D
S1B
DB
S8
S4B
1-OF-8
DECODER
1-OF-4
DECODER
A0 A1 A2 EN
A0 A1 EN
Figure 1.
GENERAL DESCRIPTION
The ADG1208 and ADG1209 are monolithic, iCMOS® analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG1208 switches one of eight
inputs to a common output as determined by the 3-bit binary
address lines A0, A1, and A2. The ADG1209 switches one of
four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An
EN input on both devices is used to enable or disable the device.
When disabled, all channels are switched off. When on, each
channel conducts equally well in both directions and has an
input signal range that extends to the supplies.
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metal-
oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
Rev. B
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The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data acquisition
and sample-and-hold applications, where low glitch and fast
settling are required. Figure 2 shows that there is minimum
charge injection over the entire signal range of the device.
iCMOS construction also ensures ultralow power dissipation,
making the parts ideally suited for portable and battery-
powered instruments.
1.0
MUX (SOURCE TO DRAIN)
0.9 ^TA ^{= 25°C}
0.8
0.7
0.6
V_DD = +15V
0.5
V_SS = –15V
0.4
0.3
V_DD = +12V
V_SS = 0V
0.2
0.1
0
–15
V_DD = +5V
V_SS = –5V
–10
–5
0
5
10
15
V_S (V)
Figure 2. Source to Drain Charge Injection vs. Source Voltage
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