AD7570 Datasheet, PDF (1/12 Pages) Analog Devices – 10-BitMonolithicAID Converter

r. ANALOG
8 ^{L.III DEVICES}
CMOS
10-BitMonolithiAc ID Converter
FEATURES
8- and 10-Bit Resolution
20llS Conversion Time
Microprocessor Compatibility
Very Low Power Dissipation
Parallel and Serial Outputs
Ratiometric Operation
TTL/DTL/CMOS Logic Compatibility
CMOS Monolithic Construction
O⁸ _{BGENERAL DESCRIPTION}
S The AD7570 is a monolithic CMOS 10-bit successive approxi-
mation AID converter on a 120 by 13 5 mil chip, requiring
O _{only an external comparator, reference and passive clocking}
components. Ratiometric operation is inherent, since an ex-
8 ^{L tremely accurate multiplying DAC is used in the feedback loop.}
E _{The AD7570 parallel output data lines and Busy line utilize}
T ^{three-state logic to permit bussing with other AID output and}
E ^{control lines or with other I/O interface circuitry. Two enables}
FUNCTIONAL DIAGRAM
OUT1
OUT2
AIN
VREF
I
I
10
,..,....--0 DB9 (MSB)
DB8
are available: one controls the two MSBs; the second controls
18
DB1
the remaining 8 LSBs. This feature provides the control interface
for most microprocessors which can accept only an 8-bit byte.
The AD7570 also provides a serial data output line to be used
in conjunction with the serial synchronization line. The clock
CaMP
8
can be driven externally or, with the addition of a resistor and
a capacitor, can run internally as high as 0.6MHz allowing a
STRT
total conversion time (8 bits) of typically 201ls. An 8-bit short
ClK
cycle control pin stops the clock after exercising 8 bits, nor-
mally used for the "J" version (8-bit resolution).
SUCCESSIVE
APPROXIMATION
lOGIC
19
DBO (lSBI
28
BUSY
8
SRO
27
BSEN
20
HBEN
21
lBEN
9
- SYNC
The AD7570 requires two power supplies, a +15V main supply
and a +5V (for TTL/DTL logic) to + 15V (for CMOS logic)
supply for digital circuitry. Both analog and digital grounds
are available.
L-221-13l-1l-6T-
-l
220 236 16 66
Vcc DGND voo AGND
The AD7570 is a monolithic device using a proprietary CMOS
process featuring a double layer metal interconnect, on-chip
thin-film resistor network and silicon nitride passivation
ensuring high reliability and excellent long term stability.
8
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