FMI16N60E Datasheet, PDF (2/5 Pages) Actel Corporation – N-CHANNEL SILICON POWER MOSFET

FMI16N60E
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
40
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
10²
10¹
t=
1µs
10µs
100µs
10⁰
1ms
10^-1
Pow er loss waveform :
Square w aveform
P_D
tt
10^-2
10^-1
10⁰
10¹
10²
VDS [V]
D.C.
10³
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
100
30
20
10
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.1
1
10
100
ID [A]
10
1
0.1
2
3
4
5
6
7
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.8
VGS=4.5V
5V
0.7
5.5V
6V
0.6
10V
0.5
0.4
0.3
0
2
5
10
15
20
25
30
ID [A]