ACE24C02 Datasheet, PDF (5/20 Pages) ACE Technology Co., LTD. – Two-wire Serial EEPROM

ACE24C02/04/08/16B
Two-wire Serial EEPROM
Write Protect Description
WP Pin Status
ACE24C02B
Part of the Array Protected
ACE24C04B ACE24C08B
ACE24C16B
At V_CC
Full (2K) Array Full (4K) Array Full (8K) Array Upper Half (16K) Array
At GND
Normal Read / Write Operations
Memory Organization
ACE24C02B, 2K SERIAL EEPROM:
Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address for
random word addressing.
ACE24C04B, 4K SERIAL EEPROM:
Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address for
random word addressing.
ACE24C08B, 8K SERIAL EEPROM:
Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit data word address for
random word addressing.
ACE24C16B, 16K SERIAL EEPROM:
Internally organized with 128 pages of 16 bytes each, the 16K requires an 11-bit data word address for
random word addressing.
Pin Capacitance
Applicable over recommended operating range from: TA = 25℃, f = 1.0 MHz, VCC = +1.8V.
Symbol
Test Condition
Max
C_I/O
Input / Output Capacitance (SDA)
8
C_IN
Input Capacitance (A₀, A₁, A₂, SCL)
6
Units
pF
pF
Conditions
V_I/O = 0V
V_IN = 0V
DC Characteristics
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.8V to +5.5V, (unless otherwise noted).
Symbol
Parameter
Test Condition
Min Typ Max Units
V_CC
Supply Voltage
I_CC1
Supply Current
1.8
5.5
V
V_CC = 5.0V, Read at 100kHz
0.4 1.0 mA
I_CC2
Supply Current
V_CC = 5.0V, Write at 100 kHz
I_SB
Standby Current
V_IN = V_CC/GND
I_LI
Input Leakage Current
V_IN = V_CC/GND
2.0 3.0 mA
1.0 µA
3.0 µA
I_LO
Output Leakage Current
V_OUT = V_CC/GND
0.05 3.0 µA
V_IL
Input Low Level
-0.3
V_CCx0.3 V
V_IH
Input High Level
V_CCx0.7
V_CC+0.3 V
V_OL3
Output Low Level
V_CC = 5.0V, I_OL = 3.0 mA
0.4
V
VER 1.3 5