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ACE4940M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – Dual N-Channel 40-V MOSFET
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ACE4940M
Dual N-Channel 40-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current IDSS
On-State Drain Current
Drain-Source On-Resistance
ID(on)
RDS(ON)
Forward Transconductance
gFS
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.6A
VGS = 4.5 V, ID =5.9 A
VDS = 15 V, ID = 6.6 A
IS = 1.5 A, VGS = 0 V
Dynamic
VDS = 20 V, VGS = 4.5 V, ID =6.6 A
VDS = 20 V, RL = 3 Ω, ID = 6.6 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min Typ Max Unit
1
V
±100 nA
1
uA
25
4.1
A
22
mΩ
27
40
S
0.7
V
19
5.7
nC
9.2
9
17
ns
59
26
1309
250
pF
151
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.2 3
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