 English |
|
|
|
|
|
|
|
| ACE2390M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 150-V MOSFET | |||
| |||
| ◁ |
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
ACE2390M
N-Channel 150-V MOSFET
Symbol
VGS (th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 120 V, VGS = 0 V
VDS = 120V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 1.1 A
VGS = 4.5 V, ID = 0.8 A
VDS = 15 V, ID = 1.1 A
IS = 0.8 A, VGS = 0 V
Dynamic
VDS = 75 V, VGS = 4.5 V, ID = 1.1 A
VDD = 75 V, RL = 75 Ω , ID = 1.1 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f =1 MHz
Min. Typ. Max. Unit
1
V
±100 nA
1
uA
25
5
A
0.7
mΩ
1.2
5
S
0.75
V
3.5
1.3
nC
1.5
4.4
4.9
nS
18.4
4.9
356
38
pF
17
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese