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| ACE2370M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 100-V MOSFET | |||
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Electrical Characteristics
TA=25â, unless otherwise specified.
ACE2370M
N-Channel 100-V MOSFET
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
Gate Resistance
Symbol
VGS (th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
VDS = 80 V, VGS = 0 V
VDS = 80V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 1.2 A
VGS = 4.5 V, ID = 1.0 A
VDS = 15 V, ID = 1.2 A
IS = 0.8 A, VGS = 0 V
Dynamic
VDS = 50 V, VGS = 4.5 V, ID = 1.2 A
VDD = 50 V, RL = 41.7 Ω , ID = 1.2 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f =1 MHz
f =1 MHz
Min. Typ. Max. Unit
1
V
±100 nA
1
uA
10
4
A
280
mΩ
355
5
S
0.75
V
3.9
1.3
nC
2.0
4.8
3.9
nS
12.7
3.2
332
40
pF
29
0.3
Ω
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3
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