ACE2358M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 60-V MOSFET

ACE2358M
N-Channel 60-V MOSFET
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
VGS(th)
VGS(th)
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
t_d(on)
tr
t_d(off)*
t_f
C_iss
C_oss
C_rss
Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2 A
VDS = 15 V, ID = 2.5 A
IS = 1 A, VGS = 0 V
Dynamic b
V_DS = 30 V, V_GS = 4.5 V, I_D = 2.5 A
V_DS = 30 V, R_L = 12 Ω, I_D = 2.5 A,
V_GEN = 10 V, R_GEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min. Typ. Max. Unit
1
V
±100 uA
1
uA
25
5
A
92
mΩ
107
10
S
0.74
V
4
1.0
nC
1.7
3
6
nS
17
5
330
31
pF
27
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3