 English |
|
|
|
|
|
|
|
| ACE2341 Datasheet, PDF (3/8 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
| |||
| ◁ |
ACE2341
Technology P-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25â, Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
-20
-0.35
V
-0.9
Gate Leakage Current
IGSS
VDS=0.V, VGS=±12V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V TJ=55â
-1 uA
-10
On-State Drain Current
ID(ON)
VDSâ¦-5V, VGS=-4.5V
-6
A
VGS=-4.5V, ID=-3.3A
0.036 0.045
Drain-Source On-Resistance RDS(ON)
VGS=-2.5V, ID=-2.8A
0.045 0.055 â¦
VGS=-1.8V, ID=-2.3A
0.055 0.065
Forward Transconductance
Gfs
VDS=-5.0V, ID=-3.3A
3
S
Diode Forward Voltage
VSD
IS=-1.6A, VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
td(on)
tr
Turn-Off Time
td(off)
tf
VDS=-6V, VGS=-4.5V,
IDâ£-3.3A
VDS=-6V, VGS=0V,
f=1MHz
VDD=-6V, RL=6â¦
IDâ¡-1.0A, VGEN=-4.5V
RG=6â¦
8
13
1.2
nC
2.2
700
160
pF
120
15 25
35 55
ns
60 90
40 60
VER 1.2 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese