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| ACE2303 Datasheet, PDF (3/8 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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ACE2303
Technology P-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25â, Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V, ID=-10uA
VDS=VGS, ID=-250uA
VDS=0.V, VGS=±20V
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V TJ=55â
VDSâ¦-5V, VGS=-10V
VGS=-10V, ID=-2.6A
VGS=-4.5V, ID=-2.0A
VDS=-10V, ID=-1.7A
IS=-1.25A, VGS=0V
VDS=-15V, VGS=-10V,
IDâ£-1.7A
VDS=-15V, VGS=0V,
f=1MHz
VDD=-15V, RL=15â¦
IDâ¡-1.0A, VGEN=-10V
RG=6â¦
Min.
-30
-1.0
-6
Typ
0.095
0.125
2.4
-0.8
5.8
0.8
1.5
226
87
19
9
9
18
6
Max.
-3.0
±100
-1
-10
0.130
0.180
-1.2
10
20
20
35
20
Unit
V
nA
uA
A
â¦
S
V
nC
pF
ns
VER 1.2 3
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