ACE2302M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 20-V MOSFET

ACE2302M
N-Channel 20-V MOSFET
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V_GS(th)
V_GS(th)
I_DSS
I_D(on)
R_DS(on)
g_fs
V_SD
Qg
Qgs
Qgd
t_d(on)
tr
t_d(off)*
t_f
C_iss
C_oss
C_rss
Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 2.7 A
VGS = 2.5 V, ID = 2.2A
VDS = 15 V, ID = 2.7 A
IS = 0.8 A, VGS = 0 V
Dynamic b
V_DS = 10 V, V_GS = 4.5 V, I_D = 2.7 A
V_DS = 10 V, R_L = 3.8 Ω, I_D = 2.7 A,
V_GEN = 4.5 V, R_GEN = 6 Ω
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Min. Typ. Max. Unit
0.4
V
±100 uA
1
uA
25
5
A
76
mΩ
103
8
S
0.77
V
1.8
0.2
nC
0.6
7
15
nS
25
11
73
25
pF
20
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3