ACE2301 Datasheet, PDF (3/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE2301
Technology P-Channel Enhancement Mode MOSFET
Electrical Characteristics
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Trans conductance
BV_DSS
V_GS=0V, I_D=250uA
R_DS(ON)
V_GS=-4.5V, I_D=-2.8A
R_DS(ON)
V_GS=-2.5V, I_D=-2.0A
V_GS(th)
V_DS=VGS, I_D=250uA
I_DSS
V_DS=-9.6V, V_GS=0V
I_GSS
V_GS=±8V, V_DS=0V
G_fs
V_DS=-5V, I_D=-2.8A
Dynamic³⁾
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_g
Q_gs
Q_gd
V_DS=-6V, I_D=-2.8A
V_GS=-4.5V
T_d(on)
T_f
t_d(off)
t_f
V_DD=-6V,RL=6Ω
I_D=-1A, V_GEN=-4.5V
R_G=6Ω
C_iss
VDS=-6V, VGS=0V
C_oss
F=1.0MHz
C_rss
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I_S
V_SD
I_S=-1.6A,V_GS=0V
Note: Pulse test pulse width<=300us, duty cycle<=2%.
Min. Typ. Max. Unit
-20
V
70.0 100.0 _mΩ
85.0 150.0
-0.4
-0.9
V
-1
uA
±100 nA
6.5
S
5.8 10
0.85
nC
1.7
13
25
36
60
ns
42
70
34
60
415
223
pF
87
-1.6
A
-1.2
V
VER 1.2 3