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| ACE2020M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 200-V MOSFET | |||
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ACE2020M
N-Channel 200-V MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V
IDSS
VDS = 160 V, VGS = 0 V, TJ = 55°C
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
rDS(on)
VGS = 10 V, ID = 9.6 A
VGS = 5.5 V, ID = 8.3 A
Forward Transconductance
Diode Forward Voltage
gfs
VDS = 15 V, ID = 9.6 A
VSD
IS = 23 A, VGS = 0 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 100 V, VGS = 4.5 V, ID = 9.6 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 100 V, RL = 10.55 Ω , ID = 9.6 A,
VGEN = 10 V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f =1 MHz
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min. Typ.
1
24
4.4
0.95
4
1.7
1.8
10
8
27
13
807
81
38
Max. Unit
V
±100 nA
1
uA
25
A
260
mΩ
300
S
V
nC
nS
pF
VER 1.1 3
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