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| ACE2006M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 60-V MOSFET | |||
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ACE2006M
N-Channel 60-V MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55°C
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
rDS(on)
VGS = 10 V, ID = 15.2A
VGS = 4.5 V, ID = 14A
Forward Transconductance
gfs
Diode Forward Voltage
VSD
VDS = 15 V, ID = 15.2A
IS = 21 A, VGS = 0 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 30 V, VGS = 4.5 V, ID = 15.2 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 2 Ω , ID = 15.2 A, VGEN = 10
V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f =1 MHz
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
1
V
±100 nA
1 uA
25 uA
34
A
94 mΩ
109 mΩ
20
S
1.03
V
5.1
2.3
nC
2.0
4
9
ns
17
19
353
26
pF
14
VER 1.1 3
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