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| ACE18010M04N Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 100-V MOSFET | |||
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ACE18010M04N
N-Channel 100-V MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS= 0 V, VGS= ±20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 5.5V, ID = 16A
VDS = 15 V, ID = 20 A
IS= 90A, VGS = 0 V
Dynamic
VDS= 50V, VGS = 5.5 V, ID= 20 A
VDS= 50V, RL= 2.5Ω, ID = 20 A,
VGEN= 10 V, RGEN= 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min Typ Max Unit
1
V
±100 nA
1
uA
10
220
A
6.5
mΩ
8.5
18
S
1
V
78
42
nC
27
49
37
ns
117
51
8681
730
pF
331
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.1 3
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