English
Language : 

ACE1430M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 30-V MOSFET
◁
ACE1430M
N-Channel 30-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(ON)
gFS
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 8.8 A
VDS = 15 V, ID = 11 A
IS = 1.9 A, VGS = 0 V
Dynamic
VDS = 15 V, VGS = 4.5 V, ID = 11 A
VDS = 15 V, RL = 1.4 Ω, ID = 11 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 Mhz
Min Typ Max Unit
1
V
±100 nA
1
uA
25
20
A
10.5
mΩ
18
13
S
0.77
V
11
4.9
nC
3.5
6
6
ns
29
8
1379
156
pF
115
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.1 3
 ▷