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ACE1421M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – P-Channel 20-V MOSFET
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ACE1421M
P-Channel 20-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance RDS(ON)
Forward Transconductance
gFS
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = ±8 V
VDS = 24 V, VGS = 0 V
VDS = -16 V, VGS = 0 V, TJ = 55°C
VDS =- 5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -7A
VGS = -2.5 V, ID = -5.6 A
VDS = -15 V, ID = -7 A
IS = -2.5 A, VGS = 0 V
Dynamic
VDS = -10 V, VGS = -4.5 V, ID = -7 A
VDS = -10 V, RL = 1.4 Ω, ID = -7 A,
VGEN = -4.5 V, RGEN = 6 Ω
VDS = -15 V, VGS = 0 V, f = 1 Mhz
Min Typ Max Unit
0.4
V
±100 nA
-1 uA
-25
-12
A
26
mΩ
34
8
S
0.68
V
30
4
nC
6
6
12
ns
85
35
1435
126
pF
113
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.1 3
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