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ACE1420M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 20-V MOSFET
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ACE1420M
N-Channel 20-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(ON)
gFS
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 10 A
VGS = 2.5 V, ID = 8 A
VDS = 15 V, ID = 10 A
IS = 1.4 A, VGS = 0 V
Dynamic
VDS = 10 V, VGS = 4.5 V, ID = 10 A
VDS = 10 V, RL = 1 Ω, ID = 10 A,
VGEN = 4.5 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 Mhz
Min Typ Max Unit
0.4
V
±100 nA
1
uA
10
20
A
9
mΩ
11
5
S
0.74
V
20
3.6
nC
5.5
6
14
ns
84
24
1920
160
pF
143
Note :
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
VER 1.1 3
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