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| ACE1106M Datasheet, PDF (3/7 Pages) ACE Technology Co., LTD. – N-Channel 60-V MOSFET | |||
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ACE1106M
N-Channel 60-V MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
VGS (th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
ID(on)
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
rDS(on)
gfs
VSD
VGS = 10 V, ID = 30A
VGS = 4.5 V, ID = 20A
VDS = 15 V, ID = 20 A
IS = 55A, VGS = 0 V
Dynamic b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 30 V, VGS = 4.5 V, ID = 20 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
VDD = 30 V, RL = 1.5 Ω , ID = 20 A,
Turn-Off Delay Time
td(off)
VGEN = 10 V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f =1 MHz
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min.
1
110
Typ. Max. Unit
V
±100 nA
1
25
uA
A
8
13
mΩ
40
S
1.1
V
64
28
nC
36
35
60
174
ns
52
9289
572
pF
555
VER 1.1 3
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