ACE2341B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE2341B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 ^OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
State
Drain-Source Breakdown Voltage V_(BR)DSS V_GS=0V, I_D=-250uA -20
Zero Gate Voltage Drain Current
I_DSS
V_DS=-16V, V_GS=0V
Gate Leakage Current
I_GSS
V_GS=±12V, V_DS=0V
V
-1 uA
±100 nA
Static Drain-Source On-Resistance R_DS(ON)
V_GS=-4.5V, I_D=-4.3A
V_GS=-2.5V, I_D=-2.5A
55
65
70
85 mΩ
Gate Threshold Voltage
Forward Transconductance
Drain Forward Voltage
V_GS=-1.8V, I_D=-2A
112 125
V_GS(th) V_DS=V_GS, I_D=-250uA -0.6 -0.81 -1.4
V
g_FS
V_DS=-5V, I_D=-4A
15
S
V_SD
I_S=-1.7A,V_GS=0V
-0.85 -1
V
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q_g
Q_gs
Q_gd
T_d(on)
t_f
t_d(off)
t_f
V_DS=-10V, I_D=-4.5A
V_GS=-4.5V
V_DS=-10V,R_L=10Ω
I_D=-1A, R_GEN=6Ω
V_GS=-4.5V
Dynamic
8.92 11.6
1.8 2.34 nC
2.04 2.65
16.08 32.16
5.28 10.56
ns
37.6 75.2
7.28 14.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
V_DS=-10V, V_GS=0V
f=1MHz
C_rss
800 960
131
pF
103
Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2