ACE2303_12 Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

Packaging Type
SOT-23-3
3
ACE2303
P-Channel Enhancement Mode MOSFET
SOT-23-3
1
2
3
Description
Gate
Source
Drain
1
2
Ordering information
ACE2303 XX + H
Halogen - free
Pb - free
BM: SOT-23-3
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V_(BR)DSS
V_GS=0V, I_D=-10uA
-30
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS, I_D=-250uA
-1.0
V
-3.0
Gate Leakage Current
I_GSS
V_DS=0.V, V_GS=±20V
±100 nA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-30V, V_GS=0V
V_DS=-30V, V_GS=0V T_J=55℃
-1
uA
-10
On-State Drain Current
I_D(ON)
V_DS≦-5V, V_GS=-10V
-6
A
Drain-Source On-Resistance R_DS(ON)
V_GS=-10V, I_D=-2.6A
V_GS=-4.5V, I_D=-2.0A
0.095 0.130
Ω
0.125 0.180
Forward Transconductance
gfs
V_DS=-10V, I_D=-1.7A
2.4
S
Diode Forward Voltage
V_SD
I_S=-1.25A, V_GS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Q_g
Q_gs
V_DS=-15V, V_GS=-10V,
I_D≡-1.7A
Q_gd
C_iss
V_DS=-15V, V_GS=0V,
C_oss
f=1MHz
5.8 10
0.8
nC
1.5
226
pF
87
VER 1.3 2