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| ACE1550B Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1550B XX + H
Halogen - free
Pb - free
KM : SOT-523
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-Resistance RDS(ON)
Forward Transconductance gfs
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
REVERSE Transfer
Capacitance
Ciss
Coss
Crss
Conditions
Static
VGS=0V, ID=-250 uA
VDS=VGS, IDS=-250uA
VDS=0V,VGS=±12V
VDS=-20V, VGS=0V
VGS=-4.5V, ID=-0.6A
VGS=-2.5V, ID=-0.5A
VGS=-1.8V, ID=-0.4A
VDS=-10V,ID=-0.4A
ISD=-0.15A, VGS=0V
Switching
VDS=-10V, VGS=-4.5V, ID=-0.25A
VGS=-4.5V, ID=-0.2A, VDS=-10V,
RG=10Ω
Dynamic
VGS=0V, VDS=-10V, f=1MHz
Min. Typ. Max. Unit
-20
V
-0.3
-0.8
100 nA
1 uA
500 620
700 860 mΩ
1000 1450
1
S
-0.65 -1.2 V
1.0 1.3
0.1
nC
0.3
10 15
10 15
nS
40 60
30 50
70 100
20
pF
10
VER 1.2 2
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