ACE1526B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE1526B
P-Channel Enhancement Mode Field Effect Transistor
Electrical CharacteristicsTA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown
Voltage
V_(BR)DSS
V_GS=0V, I_D=250uA
Zero Gate Voltage Drain
Current
I_DSS
V_DS=-30V, V_GS=0V
Gate Threshold Voltage
Gate Leakage Current
V_GS(th)
I_GSS
V_GS=V_GS, I_DS=-250uA
V_GS=±20V, V_DS=0V
Drain-Source
On-Resistance
Forward
Transconductance
R_DS(ON)
g_FS
V_GS=-10V, I_D=-6A
V_GS=-4.5V, I_D=-3A
V_DS=-10V,I_D=-5.3A
Diode Forward Voltage
V_SD
I_S=-1.7A, V_GS=0V
Switching
Min. Typ. Max. Unit
-30
V
-1
uA
-1 -1.4
55
68
-6
V
100 nA
75
mΩ
80
10
S
-0.82 -1.2
V
Total Gate Charge
Qg
28 36.4
Gate-Source Charge
Qgs V_GS= -10V,V_DS=-15V,I_D= -5.3A
3
3.9 nC
Gate-Drain Charge
Qgd
7
9.1
Turn-on Delay Time
t_d(_on)
9
18
Turn-on Rise Time
Turn-off Delay Time
t_r
t_d(_off)
V_GS=-10V,V_DS=-15V, R_L=15Ω,
R_GEN=6Ω
15
30
ns
75 150
Turn-off Fall Time
t_f
Dynamic
40
80
Input Capacitance
C_iss
745
Output Capacitance
C_oss
V_GS=0V, V_DS=-15V, f=1MHz
440
pF
Reverse Transfer
Capacitance
C_rss
120
Note:
1. The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.1 2