ACE1522B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 ^OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
On/Off characteristics
Drain-Source Breakdown Voltage V_(BR)DSS V_GS=0V, I_D=-250uA -50
V_DS=-50V, V_GS=0V
Zero Gate Voltage Drain Current
I_DSS
V_DS=-50V, V_GS=0V,
T_J=125℃
Gate Leakage Current
I_GSS
V_GS=±20V, V_DS=0V
On characteristics ^b
V
-15
uA
-60
±10 nA
Static Drain-Source On-Resistance R_DS(ON) V_GS=-5V, I_D=-0.1A
10 Ω
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS, I_D=-1mA -0.8 -1.75
-2
V
Forward Transconductance
g_FS
V_DS=-25V, I_D=-0.1A 0.05 0.6
S
Switching characteristics ^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q_g
Q_gs
V_DS=-25V, I_D=-0.1A
V_GS=-5V
Q_gd
T_d(on)
t_f
t_d(off)
t_f
V_DD=-30V, I_D=-0.27A,
V_GS=-10V
R_GEN=6Ω
Dynamic characteristics
0.9
1.3
0.2
nC
0.3
2.5
5
6.3
13
ns
10
20
4.8
9.6
Input Capacitance
C_iss
33
Output Capacitance
C_oss
V_DS=-10V, V_GS=0V
f=200KHz
38
pF
Reverse Transfer Capacitance
C_rss
36
Gate Resistance
R_G
V_GS=-15mV,
f=1.0MHz
9
Ω
Drain-source diode characteristics and maximum ratings ^b
Drain-Source Diode Forward
Voltage
V_SD
V_GS=0V, I_S=-0.26A ⁽²⁾
-0.8 -1.2 V
Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the
user's board design.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
VER 1.2 2