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| ACEDC3904B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACEDC3904B
N-Channel Enhancement Mode Power MOSFET
Description
ACEDC3904B uses advanced trench technology and design to provide excellent RDS(on) with low
gate charge. It can be used in a wide variety of applications.
Features
ï¬ VDS=30V , ID=50A
ï¬ RDS(ON) @ VGS=10V, TYP 3.5mΩ
ï¬ RDS(ON) @ VGS=4.5V , TYP 5mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25â
TA=100â
ID
50
A
35
Drain Current (Pulsed)*B
IDM
100
A
Power Dissipation
TA=25â
PD
23
W
Operating temperature / storage temperature
TJ/TSTG
-55~150 â
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
Packaging Type
PDFN3*3-8L
DFN3*3-8L
VER 1.1 1
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