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| ACE9926B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used
individually, in parallel or to form a bidirectional blocking switch.
Features
ï· VDS(V)=20V
ï· ID=6A (VGS=4.5V)
ï· RDS(ON)<30mΩ (VGS=4.5V)
ï· RDS(ON)<40mΩ (VGS=2.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
20
V
±12 V
6
A
5
Drain Current (Pulse) * B
IDM
24
A
Power Dissipation
TA=25 OC
TA=70 OC
PD
2
W
1.3
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOP-8
VER 1.2 1
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