ACE9435B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
 VDS(V)=-320V, I_D=-5.24.1A
 RDS(ON)=51mΩ @ V_GS=-10V
 RDS(ON)=68mΩ @ V_GS=-4.5V
 High density cell design for low R_DS(ON)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current ^{(Note 1)}
Continuous T_A=25 ^OC
Pulsed ^{(Note 2)}
Total Power Dissipation ^{(Note 1)}
Operating and Storage Temperature Range
Symbol Max Unit
V_DSS
V_GSS
-30 V
±20 V
-5.2
I_D
A
-50
P_D
1.5 W
T_J,T_STG -55 to 150 ^OC
Packaging Type
SOP-8
8
7
6
5
1
2
3
4
VER 1.2 1