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| ACE9006M06P Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel 60-V MOSFET | |||
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ACE9006M06P
P-Channel 60-V MOSFET
Description
The ACE9006M06P uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
ï· Low rDS(on) trench technology
ï· Low thermal impedance
ï· Fast switching speed
Applications
ï· White LED boost converters
ï· Automotive Systems
ï· Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
-60
6.2 @ VGS = -10V -110A
7.3 @ VGS = -4.5V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous
Gate-Source Voltage
Drain Current a
Pulsed Drain Current b
TA=25â
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25â
Operating temperature / storage temperature
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ/TSTG
Limit
-60
±20
-110
-240
-90
300
-55~175
Units
V
V
A
A
A
W
â
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
1
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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