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| ACE9006M03N Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 60-V MOSFET | |||
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ACE9006M03N
N-Channel 60-V MOSFET
Description
The ACE9006M03N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
ï¬ Low rDS(on) trench technology
ï¬ Low thermal impedance
ï¬ Fast switching speed
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
60
3 @ VGS = 10V
120A
4 @ VGS = 5.5V
Applications
ï· White LED boost converters
ï· Automotive Systems
ï· Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25â
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25â
Operating temperature / storage temperature
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ/TSTG
Limit
60
±20
120
360
90
300
-55~175
Units
V
V
A
A
A
W
â
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
1
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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