ACE9006M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 60-V (D-S) MOSFET

ACE9006M
N-Channel 60-V (D-S) MOSFET
Description
ACE9006M uses advanced trench technology to provide excellent R_DS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
(TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit Unit
Drain-Source Voltage
V_DS
60
V
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^a
T_C=25°C
I_D
Pulsed Drain Current ^b
I_DM
Continuous Source Current (Diode Conduction) ^a
I_S
Power Dissipation ^a
T_C=25°C
P_D
90
A
240
90
A
300
W
Operating Junction and Storage Temperature Range T_J, T_stg -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol Maximum Unit
R_θJA
R_θJC
62.5
0.5
°C/W
VER 1.1 1