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| ACE8810B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection | |||
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ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features
ï· VDS(V)=20
ï· ID=7A (VGS=4.5V)
ï· RDS(ON)ï¼21Ω (VGS=4.5V)
ï· RDS(ON)ï¼25Ω (VGS=2.5V)
ï· RDS(ON)ï¼33Ω (VGS=1.8V)
ï· ESD Protected: 2,000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
TA=25 OC
TA=70 OC
Drain Current (Pulse) *B
Power Dissipation(1)
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Packaging Type
TSSOP-8
Symbol Max Unit
VDS
20
V
VGS
±8
V
7
ID
5.6 A
IDM
30
1.5
PD
W
1
TJ,TSTG -55 to 150 OC
VER 1.2 1
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