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| ACE8601B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection | |||
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ACE8601B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE8601B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features
ï· VDS(V)=20V
ï· ID=6A (VGS=4.5V)
ï· RDS(ON)<21 mΩ (VGS=4.5V)
ï· RDS(ON)<25 mΩ (VGS=2.5V)
ï· RDS(ON)<35 mΩ (VGS=1.8V)
ï· ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
Continuous Drain Current *AC
TA=25â
TA=70â
VGSS
ID
±8 V
6
A
4.8
Pulsed Drain Current
IDM
24 A
Power Dissipation
TA=25â
TA=70â
PD
2.5
W
1.6
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
DFN3*3-8L
VER 1.2 1
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