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| ACE8212B Datasheet, PDF (1/9 Pages) ACE Technology Co., LTD. – Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD | |||
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ACE8212B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD
Description
The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features
ï· VDS(V)=20V
ï· ID=8A (VGS=10V)
ï· TSSOP-8
RDS(ON)<13 mΩ (VGS=10V)
RDS(ON)<14 mΩ (VGS=4.5V)
RDS(ON)<19 mΩ (VGS=2.5V)
RDS(ON)<27 mΩ (VGS=1.8V)
ï· DFN2*5
RDS(ON)<13 mΩ (VGS=10V)
RDS(ON)<16 mΩ (VGS=4.5V)
RDS(ON)<22 mΩ (VGS=2.5V)
RDS(ON)<35 mΩ (VGS=1.8V)
ï· ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
Continuous Drain Current *AC
TA=25â
TA=70â
VGSS
ID
±12 V
8
A
6.4
Pulsed Drain Current
IDM
30 A
Power Dissipation
TSSOP-8
DFN2*5
TA=25â
1.5
TA=70â
TA=25â
1
PD
W
1.6
TA=70â
1
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
VER 1.2 1
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