ACE8205A Datasheet, PDF (1/8 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode Field Effect Transistor

ACE8205A
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE8205A uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in
other Switching application. It is ESD protected.
ACE8205A is electrically identical.
- RoHS Compliant
Features
 V_DS (V) = 20V I_D = 6 A
R_DS(ON)< 37mΩ (V_GS = 2.5V)
R_DS(ON)< 27mΩ (V_GS = 4.5V)
 High power and current handing capability
 Lead free product is acquired
 Surface mount package
Applications
 Battery protection
 Load switch
 Power management
Absolute Maximum Ratings (T_A=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^{(Note 1)}
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient ^{(Note 2)}
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
RθJA
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
Value
20
±10
6
25
1.5
-55 To 150
83
Unit
V
V
A
A
W
℃
℃/W
VER 1.1 1