ACE7433M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel 30-V MOSFET

ACE7433M
P-Channel 30-V MOSFET
Description
The ACE7433M uses advanced trench technology to provide excellent R_DS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Symbol Limit Units
Drain-Source Voltage
V_DS
-30
V
Gate-Source Voltage
V_GS
±20
V
Continuous Drain Current ^a
T_A=25 ^OC
T_A=70 ^OC
-20
I_D
-16
A
Pulse Drain Current ^b
I_DM
-50
Continuous Drain Current (Diode Continuous) ^a
I_S
-7.3 A
Power Dissipation ^a
T_A=25 ^OC
T_A=70 ^OC
5
P_D
W
3.2
Operating Junction and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Parameter
Symbol Maximum Units
Maximum Junction-to-Ambient ^a
t≦10s
Steady State
R_θJA
25
℃/W
65
℃/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1