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ACE7409B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel 30-V (D-S) MOSFET
ACE7409B
P-Channel 30-V (D-S) MOSFET
Description
The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
 VDS (V) = -30 V
 ID =-30A (at VGS=-10V)
 < 14mΩ (VGS=-10V)
 < 20mΩ (VGS=-4.5V)
Packaging Type
Ordering information
ACE7333M XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)a
TA=25 OC
TA=70 OC
Drain Current (Pulse)c
Power Dissipation b
TA=25 OC
TA=70 OC
Operating Temperature/ Storage Temperature
Symbol
VDSS
VGSS
ID
IDM
PD
TJ,TSTG
Limit
30
±20
30
22
82
25
16
-55 to 150
Units
V
V
A
W
OC
VER 1.1 1