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| ACE7408B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACE7408B
N-Channel Enhancement Mode Power MOSFET
Description
ACE7408B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features
ï¬ VDS=30V, ID=80A
ï¬ RDS(ON)1@VGS=4.5V, TYP 4mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC
TA=25â
TA=100â
VDSS
VGSS
ID
30
V
±20
V
80
A
56
Drain Current (Pulsed)*B
IDM
220
A
Power Dissipation
TA=25â
PD
55
W
Operating temperature / storage temperature
TJ/TSTG
-55~150 â
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP
Ordering information
ACE7408B XX + H
Halogen - free
Pb - free
PN: DFN5*6-EP
VER 1.2 1
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