ACE7407A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE7407A
P-Channel Enhancement Mode MOSFET
Description
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
• -20V/-3.4A, R_{DS (ON)}= 100mΩ@VGS=-4.5V
• -20V/-2.4A, R_{DS (ON)}= 125mΩ@VGS=-2.5V
• -20V/-1.7A, R_{DS (ON)}= 150mΩ@VGS=-1.8V
• -20V/-1.0A, R_{DS (ON)}= 220mΩ@VGS=-1.25V
• Super high density cell design for extremely low R_{DS (ON)}
• Exceptional on-resistance and maximum DC current capability
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
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