 English |
|
|
|
|
|
|
|
| ACE7402A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
| |||
|
ACE7402A
N-Channel Enhancement Mode MOSFET
Description
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
⢠20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V
⢠20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
⢠20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V
⢠Super high density cell design for extremely low RDS (ON)
⢠Exceptional on-resistance and maximum DC current capability
Application
⢠Power Management in Note book
⢠Portable Equipment
⢠Battery Powered System
⢠DC/DC Converter
⢠Load Switch
⢠DSC
⢠LCD Display inverter
VER 1.1 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese