ACE7401_12 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE7401
P-Channel Enhancement Mode MOSFET
Description
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss are needed in
a very small outline surface mount package.
Features
 -30V/-2.8A, R_DS(ON)=115mΩ@V_GS=-10V
 -30V/-2.5A, R_DS(ON)=125mΩ@V_GS=-4.5V
 -30V/-1.5A, R_DS(ON)=170mΩ@V_GS=-2.5V
 -30V/-1.0A, R_DS(ON)=240mΩ@V_GS=-1.8V
 Super high density cell design for extremely low R_DS(ON)
 Exceptional on-resistance and maximum DC current capability
Application
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS -30 V
Gate-Source Voltage
V_GSS ±12 V
Continuous Drain Current (T_J=150℃)
T_A=25℃
T_A=70℃
I_D
-2.8
A
-2.1
Pulsed Drain Current
I_DM
-8 A
Continuous Source Current (Diode Conduction)
Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
I_S
P_D
T_J
T_STG
R_θJA
-1.4 A
0.33
W
0.21
-55/150 ^OC
-55/150 ^OC
105 ^OC/W
VER 1.3 1